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VMFS5H663NLWFT1G
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NVMFS5H663NLWFT1G , ON Semiconductor

Fabricante: ON Semiconductor
Número de pieza del fabricante: NVMFS5H663NLWFT1G
Paquete: DFN-5
RoHS:
Ficha de datos:

PDF For NVMFS5H663NLWFT1G

Descripción:
MOSFET T8 60V LOW COSS
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 64 S
Rds On - Drain-Source Resistance 7.2 mOhms
Rise Time 52.7 ns
Fall Time 9.5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 63 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case DFN-5
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 17 nC
Id - Continuous Drain Current 67 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 26.2 ns
Typical Turn-On Delay Time 13.4 ns
Factory Pack Quantity 1500
Subcategory MOSFETs
Referencias cruzadas
836770
1148
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