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M170N06PQ56 RLG
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TSM170N06PQ56 RLG , Taiwan Semiconductor

Fabricante: Taiwan Semiconductor
Número de pieza del fabricante: TSM170N06PQ56 RLG
Paquete: PDFN56-8
RoHS:
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PDF For TSM170N06PQ56 RLG

Descripción:
MOSFET 60V 44Amp 17mohm N channel Mosfet
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Taiwan Semiconductor
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 12 mOhms
Rise Time 19 ns
Fall Time 17 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 73.5 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case PDFN56-8
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Taiwan Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 29 nC
Technology Si
Id - Continuous Drain Current 8 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 1.4 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Referencias cruzadas
823156
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=823156&N=
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